Differential carrier lifetime in oxide-confined vertical cavity lasers obtained from electrical impedance measurements
نویسندگان
چکیده
Differential carrier lifetime measurements were performed on index-guided oxide-confined vertical cavity surface emitting lasers operating at 980 nm. Lifetimes were extracted from laser impedance measurements at subthreshold currents, with device size as a parameter, using a simple small-signal model. The carrier lifetimes ranged from 21 ns at 9 mA, to about 1 ns at a bias close to threshold. For a 636 mm oxide aperture device the threshold carrier density was n th;2310 18 cm. The effect of carrier diffusion was also considered. An ambipolar diffusion coefficient of D ;11 cm s was obtained. © 1999 American Institute of Physics. @S0003-6951~99!00507-0#
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